| PART |
Description |
Maker |
| MMBZ5250B |
Planar Die Construction
|
TY Semiconductor Co., Ltd
|
| DTAXXXXCA-R1 DTA113ZCA DTA114YCA DTA123JCA |
Epitaxial planar die construction.
|
Bruckewell Technology LTD
Bruckewell Technology L...
|
| MMBTA92 |
Epitaxial Planar Die Construction
|
SHIKE Electronics
|
| 2KBP10M |
Glass Passivated Die Construction
|
Mospec Semiconductor
|
| DXO10701095-5 |
Planar Resonator Construction
|
SYNERGY MICROWAVE CORPO...
|
| MJD117L MJD117 |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC(Korea)
KEC[KEC(Korea Electronics)]
|
| CPL |
Commercial Power, Axial Lead, Fireproof Inorganic Construction, Complete Welded Construction, High Thermal Conductivity and Moisture Resistance for Aqueous Board Wash Systems
|
Vishay
|
| TLE5009A16 |
Available as single die and dual die with separate supplies for each die
|
Infineon Technologies A...
|
| S3K-13 S3MB |
Glass Passivated Die Construction
3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
|
Diodes Incorporated
|
| ZBS |
Cemented Resistors with Corrugated Ribbon, All welded construction, Power rating up to 500 watt, Corrugated ribbon construction aids rapid cooling, Available in adjustable design
|
Vishay
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
